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Same model may have multiple batches, images only for reference.
IPI200N15N3G Real Image
Same model may have multiple batches, images only for reference.

IPI200N15N3G

Part No IPI200N15N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 50A TO262-3
Datasheet
IPI200N15N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1820pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069014-IPI200N15N3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI200N15N3G CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor that can handle a maximum power dissipation of 150W @ a temperature of 25°C.

  • Manufacturer: Infineon Technologies
  • Maximum Power Dissipation: 150W @ 25°C
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 50A
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 50A, 10V
  • Package: PG-TO262-3
  • Operating Temperature Range: -55°C to 175°C
  • Product Category: Discrete Semiconductor Products

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