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Same model may have multiple batches, images only for reference.
IPI35CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPI35CN10N G

Part No IPI35CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 27A TO262-3
Datasheet
IPI35CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 29μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1570pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 27A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 134573-IPI35CN10N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI35CN10N G CAD Model

Description

The manufacturer part number is 134573-IPI35CN10N G and the Win Source part number is 134573-IPI35CN10N G.

  • Manufacturer: Infineon Technologies
  • Polarity: N-Channel
  • Maximum Power Dissipation: 58W (Tc)
  • Package: tube/rail
  • Mounting: through hole
  • Family Name: PG-TO262-3
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 27A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 29μA
  • Max Gate Charge: 24nC @ 10V
  • Max Input Capacitance: 1570pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 27A, 10V

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