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Same model may have multiple batches, images only for reference.
IPI45N06S409AKSA2 Real Image
Same model may have multiple batches, images only for reference.

IPI45N06S409AKSA2

Part No IPI45N06S409AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 45A TO262-3
Datasheet
IPI45N06S409AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 34μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 3785pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 113483-IPI45N06S409AKSA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI45N06S409AKSA2 CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET that is designed for use in various electronic applications.

  • Manufacturer: Infineon Technologies
  • Maximum Power Dissipation: 71W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 45A
  • Maximum Rds On: 9.4 mOhm @ 45A and 10V
  • Package: PG-TO262-3-1
  • Case: Long leads
  • Mounting: through hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 3785pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9261 $57.7830
75+ $1.5804 $118.5300
115+ $1.5311 $176.0765
160+ $1.4816 $237.0560
205+ $1.4324 $293.6420
270+ $1.2841 $346.7070
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Availability: 3,390 pieces
MOQ: 30 pcs
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