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IPI60R199CP

Name: IPI60R199CP
Brand: Infineon Technologies
SKU: 158476
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPI60R199CP
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 16A I2PAK
Datasheet	IPI60R199CP Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	600V
Continuous Drain Current at 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	3.5V @ 660μA
Max Gate Charge	43nC @ 10V
Max Input Capacitance	1520pF @ 100V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	139W (Tc)
Maximum Rds On at Id,Vgs	199 mOhm @ 9.9A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO262-3
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	069018-IPI60R199CP
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IPI60R199CP CAD Model

Description

The Infineon Technologies IPI60R199CP is an N-Channel MOSFET transistor, designed for high current switching applications.

Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 16A
Rds(on): 199mOhm
Package: PG-TO262-3 package with a tube/rail packaging
Applications: Power supplies, motor control, and other high current applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
30+	$2.0513	$61.5390
70+	$1.6828	$117.7960
110+	$1.6309	$179.3990
150+	$1.5777	$236.6550
190+	$1.5258	$289.9020
255+	$1.3675	$348.7125

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,000 pieces

MOQ: 30 pcs

Order Increment : 1 pcs

Qty:

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