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Same model may have multiple batches, images only for reference.
IPI60R520CPAKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI60R520CPAKSA1

Part No IPI60R520CPAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.8A TO-262
Datasheet
IPI60R520CPAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 340μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 630pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045936-IPI60R520CPAKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI60R520CPAKSA1 CAD Model

Description

The Infineon Technologies 1045936-IPI60R520CPAKSA1 is an N-Channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 66W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 340μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Rds On @ Id,Vgs: 520 mOhm @ 3.8A, 10V
  • Mounting: Through-hole
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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