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Same model may have multiple batches, images only for reference.
IPI60R600CP Real Image
Same model may have multiple batches, images only for reference.

IPI60R600CP

Part No IPI60R600CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.1A TO-262
Datasheet
IPI60R600CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 220μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 550pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069021-IPI60R600CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI60R600CP CAD Model

Description

The Infineon Technologies IPI60R600CP is an N-Channel MOSFET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 60W (Tc)
  • Continuous Drain Current: 6.1A (Tc) @ 25°C
  • Product Status: Obsolete in the market with limited supply and demand status
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4135 $59.5485
27+ $4.4421 $119.9367
41+ $4.3035 $176.4435
56+ $4.1638 $233.1728
72+ $4.0252 $289.8144
96+ $3.6094 $346.5024
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Availability: 7,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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