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Same model may have multiple batches, images only for reference.
IPI65R099C6XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI65R099C6XKSA1

Part No IPI65R099C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 38A TO-262
Datasheet
IPI65R099C6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 127nC @ 10V
Max Input Capacitance 2780pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 12.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045937-IPI65R099C6XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI65R099C6XKSA1 CAD Model

Description

The Infineon Technologies IPI65R099C6XKSA1 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 650V and a continuous drain current of 38A @ 25°C.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 38A @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 1.2mA
  • Maximum Gate Charge: 127nC @ 10V
  • Maximum Input Capacitance: 2780pF @ 100V
  • Maximum Rds On: 99 mOhm @ 12.8A and 10V
  • Category: Active
  • Package: PG-TO262-3-1
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supply and Demand Status: Balanced

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