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Same model may have multiple batches, images only for reference.
IPI65R600C6 Real Image
Same model may have multiple batches, images only for reference.

IPI65R600C6

Part No IPI65R600C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO262
Datasheet
IPI65R600C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 210μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205231-IPI65R600C6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI65R600C6 CAD Model

Description

The Infineon Technologies IPI65R600C6 is a N-channel MOSFET with a maximum power dissipation of 63W.

  • Supply and Demand Status: Balanced supply and demand status
  • Popularity: Medium popularity
  • Package: PG-TO262-3
  • Win Source Part Number: 205231-IPI65R600C6

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195+ $0.5230 $101.9850
300+ $0.5066 $151.9800
410+ $0.4903 $201.0230
530+ $0.4739 $251.1670
710+ $0.4249 $301.6790
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Availability: 5,999 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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