The OptiMOS™ series MOSFET (Metal Oxide) electronic component is a N-Channel FET type that features a Drain to Source Voltage (Vdss) of 40 V and a Current - Continuous Drain (Id) @ 25°C of 80A (Tc).

• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 4V @ 35μA
• Power Dissipation (Max): 71W (Tc)
• Mounting Type: Through Hole
• Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
• Vgs (Max): ±20V
• Temperature Range: -55°C to 175°C (TJ)
• Supplier: Infineon Technologies
• Alternative Names: IPI80N04S4-04, INFINFIPI80N04S404AKSA1, IPI80N04S4-04-ND, SP000646190, 2156-IPI80N04S404AKSA1