The OptiMOS™ MOSFET (Metal Oxide) N-Channel FET is a high-performance transistor that is ideal for use in various electronic devices.

• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
• Power Dissipation (Max): 71W (Tc)
• Temperature Range: -55°C ~ 175°C (TJ)
• Mounting Type: Through-hole
• Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Status: Obsolete
• Alternative Parts: IRL1104LPBF, IPI90N04S402AKSA1, SIR422DP-T1-GE3, STI55NF03LIPI80N04S4L-04, and IPI80N04S4L04