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IPI80N06S2L05AKSA2

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Part No	IPI80N06S2L05AKSA2
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 80A TO262-3 / N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Datasheet	IPI80N06S2L05AKSA2 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5700 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	IPI80N
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001067948,IFEINFIPI80N06S2L05AKSA2,2156-IPI80N06S2L05AKSA2
Standard Package	500
Win Source Part Number	1218808-IPI80N06S2L05AKSA2
Ultra Librarian 3D Model	Ultra Librarian IPI80N06S2L05AKSA2 CAD Model

Alternative Products

Description

The OptiMOS™ MOSFET (Metal Oxide) is a N-Channel FET that features a drain to source voltage (Vdss) of 55 V.

Vdss: 55 V
Id: 80A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Qg (Max) @ Vgs: 230 nC @ 10 V
Ciss (Max) @ Vds: 5700 pF @ 25 V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250μA
Mounting Type: Through Hole
Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN: EAR99
REACH: Unaffected
Status: Obsolete
Alternative Cross-Reference: IPI80N06S2L-05; IPI80N06S2L05; IPI80N06S2L05AKSA1; SP001067948

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