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IPP020N06NAKSA1

Part No IPP020N06NAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 29A/120A TO220-3 / N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO220-3
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 30 V
Power Dissipation (Max) 3W (Ta), 214W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP020
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 847759-IPP020N06NAKSA1
Ultra Librarian 3D Model Ultra Librarian IPP020N06NAKSA1 CAD Model

Description

The IPP020N06NAKSA1 is a single N-Channel MOSFET transistor. It is part of the OptiMOS™ series of discrete semiconductor products and is manufactured by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 29A (Ta), 120A (Tc)
  • Maximum On-Resistance (Rds On) @ 100A, 10V Vgs: 2mOhm
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Standard Package Quantity: 50 pcs
  • Product Status: Active

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