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NP50P04SLG-E1-AY

Part No NP50P04SLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MP-3ZK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
Power Dissipation (Max) 1.2W (Ta), 84W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package TO-252 (MP-3ZK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649283-NP50P04SLG-E1-AY
Ultra Librarian 3D Model Ultra Librarian NP50P04SLG-E1-AY CAD Model

Description

The NP50P04SLG-E1-AY is a single P-channel MOSFET transistor from Renesas Electronics America. NP50P04SLG-E1-AY from Renesas Electronics America.

  • Category: Discrete semiconductor products
  • Use: Various electronic applications
  • Drain-to-Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A @ 25°C
  • Rds On (Max): 9.6mOhm @ specified Id and Vgs
  • Gate Charge (Qg): 150nC @ maximum Vgs
  • Package Type: Surface mount
  • Packaging: Tape and reel
  • Maximum Operating Temperature: 175°C
  • ECCN: EAR99
  • Counterfeit Chance: 39%
  • MSL Level: 1 (unlimited)
  • HTSUS Code: 8541.29.0095
  • Drive Voltage: 4.5V for maximum Rds On and 10V for minimum Rds On

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