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Same model may have multiple batches, images only for reference.
IPP023N04NGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP023N04NGXKSA1

Part No IPP023N04NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO220-3 / Trans MOSFET N-CH 40V 90A 3-Pin(3+Tab) TO-220 Tube
Datasheet
IPP023N04NGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 95μA
Gate Charge (Qg) (Maximum) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10000pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 167W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 90A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776890-IPP023N04NGXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP023N04N
Introduction Date March 27, 2008
ECCN EAR99
Country of Origin Austria, China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPP023N04NGXKSA1 CAD Model

Description

The Infineon Technologies IPP023N04NGXKSA1 is a MOSFET transistor that belongs to the OptiMOS series.

  • Package: TO-220-3
  • Mounting: through-hole
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 167W (Tc)
  • Maximum Drain-Source Voltage: 40V
  • Current-Continuous Drain: 90A (Tc)
  • Channel Type: N
  • Gate Charge (Qg): 120nC @ 10V
  • Input Capacitance (Ciss): 10000pF @ 20V
  • Rds On (Maximum) @ Id, Vgs: 2.3 mOhm @ 90A, 10V
  • Supply and Demand Status: Limited

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