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Same model may have multiple batches, images only for reference.
IPP039N10N5AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP039N10N5AKSA1

Part No IPP039N10N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3  /  N-Channel 100 V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
Datasheet
IPP039N10N5AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 50 V
Power Dissipation (Max) 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP039
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001602186,IFEINFIPP039N10N5AKSA1,2156-IPP039N10N5AKSA1
Standard Package 50
Win Source Part Number 1153929-IPP039N10N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP039N10N5AKSA1 CAD Model

Description

The 1153929-IPP039N10N5AKSA1 is a N-Channel MOSFET transistor from the OptiMOS series.

  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 100 A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Mounting Type: Through Hole
  • Package/Case: TO-220-3
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
  • Gate Threshold Voltage (Vgs(th)): 3.8V @ 125μA

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