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Same model may have multiple batches, images only for reference.
IPP048N06L G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP048N06L G

Part No IPP048N06L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-220
Datasheet
IPP048N06L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7600pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 4.7 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776896-IPP048N06L G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP048N06L G CAD Model

Description

The 776896-IPP048N06L G is a MOSFET transistor from Infineon Technologies.

  • Maximum Power Dissipation: 300W
  • Maximum Continuous Drain Current: 100A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 270μA
  • Maximum Gate Charge: 225nC @ 10V
  • Package: through-hole
  • Temperature Range: -55°C to 175°C
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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