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Same model may have multiple batches, images only for reference.
IPP04N03LB Real Image
Same model may have multiple batches, images only for reference.

IPP04N03LB

Part No IPP04N03LB
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220
Datasheet
IPP04N03LB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 70μA
Max Gate Charge 40nC @ 5V
Max Input Capacitance 5203pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069034-IPP04N03LB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP04N03LB CAD Model

Description

The Infineon Technologies IPP04N03LB is an obsolete MOSFET with a through-hole mounting style.

  • Maximum Power Dissipation: 107W (Tc)
  • Continuous Drain Current: 80A (Tc)
  • Maximum Rds On: 3.8 mOhm @ 55A, 10V

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