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Same model may have multiple batches, images only for reference.
IPP057N06N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP057N06N3GXKSA1

Part No IPP057N06N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO220-3
Datasheet
IPP057N06N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 58μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 6600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 119609-IPP057N06N3GXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP057N06N3GXKSA1 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel semiconductor device with a drain-source breakdown voltage of 60V and a continuous drain current of 80A at 25°C.

  • Gate-Source Threshold Voltage: 4V @ 58μA
  • Maximum Gate Charge: 82nC @ 10V
  • Maximum Input Capacitance: 6600pF @ 30V
  • Maximum Rds On at Id,Vgs: 5.7 mOhm @ 80A, 10V
  • Power Dissipation: 115W (Tc)
  • Package: PG-TO-220-3
  • Dimensions: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8324 $58.2680
170+ $0.6831 $116.1270
265+ $0.6617 $175.3505
365+ $0.6403 $233.7095
470+ $0.6191 $290.9770
625+ $0.5550 $346.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,950 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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