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Same model may have multiple batches, images only for reference.
IPP100N06S3L-04 Real Image
Same model may have multiple batches, images only for reference.

IPP100N06S3L-04

Part No IPP100N06S3L-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO-220
Datasheet
IPP100N06S3L-04 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 150μA
Max Gate Charge 362nC @ 10V
Max Input Capacitance 17270pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045976-IPP100N06S3L-04
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP100N06S3L-04 CAD Model

Description

The Infineon Technologies IPP100N06S3L-04 is a N-Channel MOSFET that features a drain-source breakdown voltage of 55V and a continuous drain current of 100A at 25°C.

  • Maximum Power Dissipation: 214W (Tc)
  • Maximum Rds On: 3.8 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 150μA
  • Maximum Gate Charge: 362nC @ 10V
  • Maximum Input Capacitance: 17270pF @ 25V
  • Case/Package: PG-TO220-3-1
  • Suitable for: use in discrete semiconductor products.

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