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Same model may have multiple batches, images only for reference.
IPP100N08N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP100N08N3GXKSA1

Part No IPP100N08N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 70A TO220-3
Datasheet
IPP100N08N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2410pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 133580-IPP100N08N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP100N08N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP100N08N3GXKSA1 is an N-channel MOSFET transistor that offers a maximum power dissipation of 100W (Tc).

  • Maximum Power Dissipation: 100W (Tc)
  • Drive Voltage: 6V, 10V
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 70A (Tc)
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 2410pF @ 40V
  • Maximum Rds On at Id, Vgs: 10 mOhm @ 46A, 10V
  • Supply and Demand Status: Limited

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