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Same model may have multiple batches, images only for reference.
IPP10N03 Real Image
Same model may have multiple batches, images only for reference.

IPP10N03

Part No IPP10N03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-220
Datasheet
IPP10N03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1639pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 9.9 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069053-IPP10N03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP10N03 CAD Model

Description

The Infineon Technologies IPP10N03 is a MOSFET Discrete Semiconductor Product that can be used for various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Rds On at Id,Vgs: 9.9 mOhm @ 50A, 10V
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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