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IPP114N03L G

Name: IPP114N03L G
Brand: Infineon Technologies
SKU: 158582
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IPP114N03L G
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 30A TO-220-3
Datasheet	IPP114N03L G Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.2V @ 250μA
Max Gate Charge	14nC @ 10V
Max Input Capacitance	1500pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	38W (Tc)
Maximum Rds On at Id,Vgs	11.4 mOhm @ 30A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO-220-3
Dimension	TO-220-3
Win Source Part Number	040645-IPP114N03L G
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPP114N03L G CAD Model

Alternative Products

Description

The Infineon Technologies IPP114N03L G is a N-channel MOSFET designed for use in discrete semiconductor products.

Maximum Power Dissipation: 38W (Tc)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 30A (Tc) @ 25°C
Gate-Source Threshold Voltage: 2.2V @ 250μA
Maximum Gate Charge: 14nC @ 10V
Maximum Rds On at Id,Vgs: 11.4 mOhm @ 30A, 10V
Popularity: Medium
Package: PG-TO-220-3
Temperature Range: -55°C to 175°C (TJ)

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