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Same model may have multiple batches, images only for reference.
IPP120N20NFDAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP120N20NFDAKSA1

Part No IPP120N20NFDAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 84A TO220-3  /  N-Channel 200 V 84A (Tc) 300W (Tc) Through Hole PG-TO220-3
Datasheet
IPP120N20NFDAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 84A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6650 pF @ 100 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPP120N20NFDAKSA1,2156-IPP120N20NFDAKSA1,SP001108122
Standard Package 50
Win Source Part Number 1065290-IPP120N20NFDAKSA1
Ultra Librarian 3D Model Ultra Librarian IPP120N20NFDAKSA1 CAD Model

Description

The IPP120N20NFDAKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Maximum Power Dissipation: 300W
  • Voltage Breakdown: 200 V
  • Continuous Drain Current: 84 A
  • Rds On: 12mOhm @ 84A, 10V
  • Gate Charge: 87 nC @ 10 V
  • Input Capacitance: 6650 pF @ 100 V
  • Package: TO-220-3
  • Temperature Range: -55°C to 175°C

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Quantity Unit Price Ext. Price
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24+ $4.3347 $104.0328
36+ $4.1993 $151.1748
50+ $4.0638 $203.1900
64+ $3.9284 $251.4176
86+ $3.5220 $302.8920
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