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Same model may have multiple batches, images only for reference.
SPI100N03S2-03 Real Image
Same model may have multiple batches, images only for reference.

SPI100N03S2-03

Part No SPI100N03S2-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI100N03S2-03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7020 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI100N
Other Names SPI100N03S203X,SP000013492
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278276-SPI100N03S2-03
Ultra Librarian 3D Model Ultra Librarian SPI100N03S2-03 CAD Model

Description

The Infineon Technologies OptiMOS™ series MOSFET with the Win Source Part Number 1278276-SPI100N03S2-03 is a discrete semiconductor product with a tube package.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (Max): 300W (Tc)
  • Mounting Type: Through-Hole
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99 compliant

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