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Same model may have multiple batches, images only for reference.
AUIRFR2905Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFR2905Z

Part No AUIRFR2905Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
AUIRFR2905Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020750-AUIRFR2905Z
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AUIRFR2905Z CAD Model

Description

The Infineon Technologies AUIRFR2905Z is a N-Channel MOSFET, which is widely used in Discrete Semiconductor Products.

  • Application: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 44nC @ 10V
  • Maximum Rds On @ Id,Vgs: 14.5 mOhm @ 36A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6211 $64.8440
90+ $1.3301 $119.7090
135+ $1.2887 $173.9745
190+ $1.2471 $236.9490
240+ $1.2055 $289.3200
325+ $1.0808 $351.2600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 395 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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