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PHM12NQ20T,518

Part No PHM12NQ20T,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 14.4A 8HVSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HVSON (6x5)
Dimension 8-VDFN Exposed Pad
Win Source Part Number 1087818-PHM12NQ20T,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHM12NQ20T,518 CAD Model

Description

The PHM12NQ20T,518 is a cutting-edge MOSFET transistor developed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor drives, and other power management tasks.

Key Features

  • Low On-Resistance: The PHM12NQ20T,518 boasts an exceptionally low on-resistance, which translates into reduced conduction losses and improved power efficiency in your applications.
  • High-Speed Switching: Engineered for high-speed switching capabilities, this MOSFET enables faster operation times in electronic circuits, making it suitable for high-frequency applications.
  • Advanced TrenchMOS Technology: Utilizing NXP's proprietary TrenchMOS technology, the PHM12NQ20T,518 offers enhanced performance, including lower gate charge and reduced capacitance, which contribute to its overall efficiency.
  • Robust Thermal Management: The device's excellent thermal characteristics ensure that it operates reliably even under high temperature conditions, thereby extending its service life and reducing the need for additional cooling solutions.

Electrical Characteristics

With a continuous drain current of 12 A and a drain-source voltage of 200 V, the PHM12NQ20T,518 is capable of handling significant power levels. The product also features a threshold voltage that ensures a low gate drive requirement, making it compatible with a variety of control circuits and reducing overall system complexity.

Applications

  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • Power management systems

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products that meet the stringent requirements of the electronics industry. The PHM12NQ20T,518 is produced with the highest standards of quality control and reliability testing, ensuring that it performs to the expectations of the most demanding applications.

Environmental Considerations

The PHM12NQ20T,518 is designed with environmental responsibility in mind. It complies with RoHS regulations, which restrict the use of certain hazardous substances in electrical and electronic equipment. By choosing this MOSFET, customers are making an environmentally conscious decision without compromising on performance.

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