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IPP12CN10LGXKSA1

Part No IPP12CN10LGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 69A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 83μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 5600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 69A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1001362-IPP12CN10LGXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP12CN10LGXKSA1 CAD Model

Description

The Infineon Technologies IPP12CN10LGXKSA1 is a MOSFET transistor with an N-Channel polarity.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 69A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 69A, 10V
  • Gate-Source Threshold Voltage: 2.4V @ 83μA
  • Maximum Gate Charge: 58nC @ 10V
  • Package: PG-TO-220-3
  • Mounting: through hole technology
  • Category: Discrete Semiconductor Product
  • Status: active
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2783 $63.9150
115+ $1.0489 $120.6235
175+ $1.0161 $177.8175
235+ $0.9834 $231.0990
305+ $0.9506 $289.9330
410+ $0.8522 $349.4020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,100 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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