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Same model may have multiple batches, images only for reference.
IPP13N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPP13N03LB G

Part No IPP13N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO-220
Datasheet
IPP13N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 20μA
Gate Charge (Qg) (Maximum) @ Vgs 10nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1355pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 52W (Tc)
Rds On (Maximum) @ Id, Vgs 12.8 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776907-IPP13N03LB G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP13N03LB G CAD Model

Description

The Infineon Technologies IPP13N03LB G is an OptiMOS MOSFET type device.

  • Current Continuous Drain (Id): 30A (Tc)
  • Maximum Drain-Source Voltage: 30V
  • Temperature Range: -55°C to 175°C
  • Package: TO-220-3
  • Mounting: through-hole
  • Gate Charge: 10nC @ 5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1355pF @ 15V
  • Maximum Power Dissipation: 52W (Tc)
  • Maximum Rds On: 12.8 mOhm @ 30A, 10V
  • Status: Discontinued
  • Popularity: Medium
  • Supply and Demand Status: Limited

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