The IPP26CN10N is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency power conversion and motor control applications. This MOSFET is part of Infineon's OptiMOS™ family, known for their superior performance and reliability.

Applications

• Synchronous Rectification in AC-DC and DC-DC converters
• Motor control in electric vehicles and industrial drives
• Power supplies for servers and telecommunications equipment
• Battery management systems (BMS)
• Solar power inverters

Features

• N-Channel, enhancement mode
• Very low on-resistance RDS(on)
• High current capability
• Logic level driving
• Avalanche rated
• 100% Avalanche tested

Benefits

• Increased efficiency in power conversion systems due to extremely low RDS(on), reducing power losses and heat dissipation.
• Higher power density and miniaturization of power supply designs.
• Simplified gate drive circuitry due to logic level driving capability.
• Enhanced system reliability and ruggedness through avalanche rating and testing.
• Improved thermal performance due to optimized package design.
• Extended lifespan of power systems through reduced operating temperatures.

Additional Details

The IPP26CN10N boasts a very low gate charge, contributing to fast switching speeds and reduced gate drive losses. This MOSFET is designed to meet the stringent requirements of modern power electronics systems, offering a combination of high efficiency, robust performance, and ease of use. Its avalanche capability ensures reliability in applications where voltage transients are a concern. The device is available in a standard through-hole package for ease of assembly and thermal management.