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IPP320N20N3 G Real Image IPP320N20N3 G real image10297
Same model may have multiple batches, images only for reference.
IPP320N20N3 G Real Image IPP320N20N3 G real image10297
IPP320N20N3 G Real Image IPP320N20N3 G real image10297
Same model may have multiple batches, images only for reference.

IPP320N20N3 G

Part No IPP320N20N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 34A TO220-3
Datasheet
IPP320N20N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 2350pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045990-IPP320N20N3 G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP320N20N3 G CAD Model

Description

The Infineon Technologies IPP320N20N3 G is an N-Channel MOSFET transistor that operates @ a maximum power dissipation of 136W (Tc).

  • Maximum Power Dissipation: 136W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 34A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 2350pF @ 100V
  • Maximum Rds On @ Id,Vgs: 32 mOhm @ 34A, 10V
  • Package: PG-TO-220-3, TO-220-3
  • Applications: Power supplies, motor control, and DC-DC converters

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