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Same model may have multiple batches, images only for reference.
IPP35CN10NGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP35CN10NGXKSA1

Part No IPP35CN10NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 27A TO220-3
Datasheet
IPP35CN10NGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 29μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1570pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 27A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 135098-IPP35CN10NGXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP35CN10NGXKSA1 CAD Model

Description

The Infineon Technologies 135098-IPP35CN10NGXKSA1 is an N-channel MOSFET that comes in a PG-TO-220-3 package.

  • Package: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 27A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 29μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 27A, 10V
  • Application: Discrete semiconductor products
  • Maximum Power Dissipation: 58W (Tc)
  • Supply and Demand Status: Limited

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