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Same model may have multiple batches, images only for reference.
2SK2376TE24L
Same model may have multiple batches, images only for reference.

2SK2376TE24L

Part No 2SK2376TE24L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 60V 45A TO220SM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252-3
Continuous Drain Current (ID) 45 A
Current Rating 45 A
Drain to Source Voltage (Vdss) 60 V
Fall Time 60 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 3.35 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 100 W
Min Operating Temperature -55 °C
Mount Surface Mount, Through Hole
Number of Pins 3
Packaging Tape & Reel (TR)
Radiation Hardening No
Rds On Max 17 mΩ
Rise Time 25 ns
RoHS Compliant
Voltage Rating (DC) 60 V
Win Source Part Number 1037744-2SK2376TE24L
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2376TE24L CAD Model

Description

The 2SK2376TE24L is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Packaging: tape and reel
  • Mounting: SMD (SMT)
  • Drain to source voltage (Vdss): 60V
  • Gate to source voltage (Vgs): 20V
  • Continuous drain current (ID): 45A
  • Maximum power dissipation: 100W
  • Rds On Max: 17 mΩ
  • Supply and demand status: shortage

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