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IPP45N06S3L-13

Name: IPP45N06S3L-13
Brand: Infineon Technologies
SKU: 461149
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPP45N06S3L-13
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 45A TO-220
Datasheet	IPP45N06S3L-13 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Gate-Source Threshold Voltage	2.2V @ 30μA
Max Gate Charge	75nC @ 10V
Max Input Capacitance	3600pF @ 25V
Maximum Gate-Source Voltage	±16V
Power Dissipation (Max)	65W (Tc)
Maximum Rds On at Id,Vgs	13.4 mOhm @ 26A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO220-3-1
Dimension	TO-220-3
Win Source Part Number	1045992-IPP45N06S3L-13
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPP45N06S3L-13 CAD Model

Alternative Products

Description

The Infineon Technologies IPP45N06S3L-13 MOSFET is a through-hole mounting N-channel polarity electronic component with a power dissipation of 65W (Tc).

Mounting: Through-Hole
Polarity: N-Channel
Power Dissipation: 65W (Tc)
Category: Discrete Semiconductor Products
Maximum Gate-Source Voltage: ±16V
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current @ 25°C: 45A (Tc)
Maximum Rds On @ Id,Vgs: 13.4 mOhm @ 26A, 10V
Maximum Gate Charge: 75nC @ 10V
Maximum Input Capacitance: 3600pF @ 25V
Package: PG-TO220-3-1
Popularity: Popular
Product Status: Obsolete (EOL)
Temperature Range: -55°C to 175°C (TJ)

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