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IPP50N10S3L-16

Part No IPP50N10S3L-16
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS-T Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186326-IPP50N10S3L-16
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP50N10S3L-16 CAD Model

Description

The IPP50N10S3L-16 is an OptiMOS™3 power MOSFET manufactured by Infineon Technologies. It is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications. The 'S3L' designation indicates it belongs to the OptiMOS™3 Low Voltage family, optimized for low on-state resistance (RDS(on)) and fast switching.

Applications

  • Synchronous rectification in SMPS: Used to improve efficiency in switch-mode power supplies by replacing diodes.
  • DC-DC converters: Found in voltage regulators for stepping down or stepping up voltage levels efficiently.
  • Motor control: Employed in motor drive circuits to control motor speed and torque with high efficiency.
  • Battery management systems (BMS): Used as a switching element in battery chargers and discharge circuits.
  • Load switches: Controls power distribution by switching loads on and off.

Features

  • Optimized for synchronous rectification: Designed for low RDS(on) at low gate drive voltage.
  • Low on-state resistance (RDS(on)): Minimizes power loss and heat generation.
  • Fast switching speed: Reduces switching losses and improves efficiency.
  • Avalanche rated: Can withstand repetitive avalanche breakdown without damage.
  • Logic level gate drive: Can be driven directly by logic signals, simplifying the drive circuitry.

Benefits

  • High efficiency: Low RDS(on) minimizes power dissipation and maximizes energy efficiency.
  • Reduced heat generation: Low RDS(on) reduces heat sink requirements.
  • Improved system performance: Fast switching speed reduces switching losses and enhances transient response.
  • Enhanced reliability: Avalanche rating enhances the robustness and reliability of the device.
  • Simplified gate drive: Logic level gate drive simplifies the design of gate drive circuitry.

Additional Details

The IPP50N10S3L-16 is typically available in a TO-220 package. Key electrical parameters include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). The total gate charge (Qg) is also an important parameter that affects switching speed and gate drive requirements. Proper PCB layout and thermal management are essential to achieve optimal performance. Refer to the manufacturer's datasheet for detailed specifications, application notes, and recommended PCB layout guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9050 $54.3000
135+ $0.7426 $100.2510
210+ $0.7194 $151.0740
290+ $0.6962 $201.8980
375+ $0.6730 $252.3750
500+ $0.6034 $301.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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