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IPP50R140CPHKSA1

Part No IPP50R140CPHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 23A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 930μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2540pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 126691-IPP50R140CPHKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP50R140CPHKSA1 CAD Model

Description

The Infineon Technologies IPP50R140CPHKSA1 is a high-performance MOSFET that is designed to meet the requirements of modern computer systems and other electronic devices.

  • Packaging: Tube/rail
  • Mounting: Through-hole
  • Popularity: Medium
  • Supply and Demand: Balance
  • Maximum Rds On at Id,Vgs: 140 mOhm @ 14A, 10V
  • Power Dissipation: 192W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4849 $58.3037
32+ $3.6798 $117.7536
49+ $3.5643 $174.6507
67+ $3.4500 $231.1500
87+ $3.3345 $290.1015
116+ $2.9903 $346.8748
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,490 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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