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Same model may have multiple batches, images only for reference.
IPP530N15N3G Real Image
Same model may have multiple batches, images only for reference.

IPP530N15N3G

Part No IPP530N15N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A TO220-3
Datasheet
IPP530N15N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 887pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 53 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 205243-IPP530N15N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP530N15N3G CAD Model

Description

The Infineon Technologies IPP530N15N3G is a MOSFET transistor with an N-channel polarity.

  • Manufacturer: Infineon Technologies
  • Polarity: N-channel
  • Maximum Power Dissipation: 68W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 21A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 35μA
  • Maximum Rds On @ Id,Vgs: 53 mOhm @ 18A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 887pF @ 75V
  • Status: active
  • Package: PG-TO220-3-1

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3+ $26.7752 $80.3256
6+ $21.9704 $131.8224
9+ $21.2832 $191.5488
12+ $20.5971 $247.1652
15+ $19.9099 $298.6485
20+ $17.8505 $357.0100
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