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ZVP2106GTC

Part No ZVP2106GTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 0.45A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Input Capacitance 100pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120324-ZVP2106GTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVP2106GTC CAD Model

Description

The ZVP2106GTC from Diodes Incorporated is a high-performance P-Channel MOSFET designed for efficient power management and control in a wide array of electronic applications. This MOSFET is an ideal component for designers looking to enhance energy efficiency and thermal performance in their designs.

Key Features

  • Low On-Resistance: The ZVP2106GTC features a low on-resistance, which minimizes power loss and improves overall efficiency in circuit operation.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures reliable operation and reduces the risk of unintentional turn-on, which could lead to power leakage or circuit damage.
  • Enhanced Durability: Built to withstand tough conditions, the ZVP2106GTC offers enhanced durability and a robust design that can handle high surge currents and thermal stresses.
  • Advanced Packaging: The device comes in a compact SOT-223 package, which is ideal for space-constrained applications while providing excellent power dissipation capabilities.

Applications

The versatility of the ZVP2106GTC P-Channel MOSFET allows it to be used in a range of applications, including:

  • Power management circuits
  • Load switches
  • Battery management systems
  • Motor control circuits
  • DC-DC converters
  • Portable electronic devices

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -60V Continuous Drain Current (I<sub>D) -280mA Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

Whether you're developing power-efficient portable devices or robust industrial systems, the ZVP2106GTC P-Channel MOSFET from Diodes Incorporated is a reliable and cost-effective solution that delivers performance, efficiency, and quality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6934 $58.9390
205+ $0.5690 $116.6450
315+ $0.5512 $173.6280
435+ $0.5334 $232.0290
565+ $0.5156 $291.3140
750+ $0.4622 $346.6500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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