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Same model may have multiple batches, images only for reference.
IPP80N04S2-04 Real Image
Same model may have multiple batches, images only for reference.

IPP80N04S2-04

Part No IPP80N04S2-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3
Datasheet
IPP80N04S2-04 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069079-IPP80N04S2-04
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80N04S2-04 CAD Model

Description

The Infineon Technologies IPP80N04S2-04 is an N-Channel MOSFET transistor, designed for high current switching applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A
  • Rds(on): 3.7mOhm
  • Package: PG-TO220-3-1
  • Packaging: Tube/rail
  • Popular choice for: Power supplies, motor control, and other high current applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8598 $60.0558
50+ $2.3470 $117.3500
77+ $2.2730 $175.0210
105+ $2.2003 $231.0315
136+ $2.1264 $289.1904
182+ $1.9069 $347.0558
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,540 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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