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IPP80N06S2-H5

Part No IPP80N06S2-H5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP80N06 - 55V-60V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603686-IPP80N06S2-H5
Ultra Librarian 3D Model Ultra Librarian IPP80N06S2-H5 CAD Model

Description

The IPP80N06S2-H5 is a N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Type: N-Channel MOSFET
  • Series: CoolMOS™
  • Package: TO-220-3
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A @ 25°C
  • Rds On: 5.5mOhm @ 80A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 230µA
  • Power Dissipation: 300W
  • Mounting Type: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4948 $59.8752
57+ $2.0467 $116.6619
88+ $1.9831 $174.5128
121+ $1.9196 $232.2716
156+ $1.8549 $289.3644
209+ $1.6632 $347.6088
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,060 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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