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Same model may have multiple batches, images only for reference.
IPP90R1K0C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP90R1K0C3XKSA1

Part No IPP90R1K0C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.7A TO-220
Datasheet
IPP90R1K0C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 370μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 850pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046047-IPP90R1K0C3XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP90R1K0C3XKSA1 CAD Model

Description

The Infineon Technologies IPP90R1K0C3XKSA1 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 89 W
  • Voltage - Drain to Source Breakdown (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 370μA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 850 pF @ 100 V
  • Mounting Type: Through Hole
  • Package / Case: PG-TO220-3-1
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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