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Same model may have multiple batches, images only for reference.
IPS040N03LGAKMA1 Real Image
Same model may have multiple batches, images only for reference.

IPS040N03LGAKMA1

Part No IPS040N03LGAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 30V 90A TO251-3
Datasheet
IPS040N03LGAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 3900pF @ 15V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046056-IPS040N03LGAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS040N03LGAKMA1 CAD Model

Description

The IPS040N03LGAKMA1 is a N-Channel MOSFET from Infineon Technologies designed for power management applications.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 90A (Tc)
  • Maximum Gate Charge: 38nC @ 10V
  • Package: PG-TO251-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Tube/Rail
  • Units per Package: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9215 $59.0580
29+ $4.0379 $117.0991
45+ $3.9120 $176.0400
62+ $3.7861 $234.7382
79+ $3.6602 $289.1558
106+ $3.2814 $347.8284
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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