The IPT012N08N5 is a high-performance N-channel MOSFET from Infineon Technologies, belonging to the OptiMOS™ 5 power transistor family. It is designed for a wide range of applications, particularly those requiring high efficiency and power density, such as synchronous rectification and DC-DC conversion.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• OR-ing MOSFETs
• Motor control
• Battery management systems

Features

• OptiMOS™ 5 technology
• Very low on-resistance Rds(on)
• 100% avalanche tested
• Logic level
• Robust body diode
• Pb-free lead plating; RoHS compliant

Benefits

• Increased system efficiency due to reduced conduction and switching losses
• Reduced heat generation, allowing for smaller heat sinks
• Easy to drive with logic-level signals
• Improved system reliability due to avalanche ruggedness
• Environmentally friendly

Technical Specifications

The IPT012N08N5 features a drain-source voltage (Vds) of 80V and a continuous drain current (Id) of up to 180A (depending on the cooling conditions). It boasts a very low on-resistance (Rds(on)), typically around 1.2 mΩ at Vgs=10V. The logic-level gate drive simplifies the gate drive circuitry. The device is available in a TO-220 package. It offers excellent thermal performance and operates over a wide temperature range. The MOSFET's robust body diode enhances performance in applications with inductive loads.