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Same model may have multiple batches, images only for reference.
IPT017N10NM5LF2ATMA1
Same model may have multiple batches, images only for reference.

IPT017N10NM5LF2ATMA1

Part No IPT017N10NM5LF2ATMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description IPT017N10NM5LF2ATMA1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 321A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 150A, 15V
Vgs(th) (Max) @ Id 3.9V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Ultra Librarian 3D Model Ultra Librarian IPT017N10NM5LF2ATMA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.1394 $57.1152
18+ $5.8580 $105.4440
27+ $5.6749 $153.2223
37+ $5.4919 $203.2003
48+ $5.3088 $254.8224
64+ $4.7596 $304.6144
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Availability: 290 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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