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IPTG014N10NM5ATMA1

Part No IPTG014N10NM5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 37A/366A HSOG-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2001090-IPTG014N10NM5ATMA1
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series OptiMOS™ 5
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 366A (Tc)
Ultra Librarian 3D Model Ultra Librarian IPTG014N10NM5ATMA1 CAD Model

Description

The Infineon Technologies OptiMOS™ 5 MOSFET is a N-Channel FET with a drain to source voltage (Vdss) of 100 V and a continuous drain current (Id) of 37A (Ta) or 366A (Tc) at 25°C. It is a high-performance transistor that is ideal for use in discrete semiconductor products, especially in applications that require MOSFETs. The OptiMOS™ 5 series is designed for high power density and efficiency, making it suitable for use in power supplies, motor control, and other applications that require high voltage and current handling capabilities. This product is available in Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® packages.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.6029 $51.6174
15+ $7.0588 $105.8820
22+ $6.8383 $150.4426
31+ $6.6177 $205.1487
40+ $6.3971 $255.8840
53+ $5.7353 $303.9709
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,370 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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