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IPU09N03LA G

Part No IPU09N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 25 V 50A (Tc) 63W (Tc) Through Hole PG-TO251-3-21
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1642 pF @ 15 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IPU09N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1479251-IPU09N03LA G
Ultra Librarian 3D Model Ultra Librarian IPU09N03LA G CAD Model

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