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IPU80R1K0CEAKMA1

Part No IPU80R1K0CEAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V TO251-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046105-IPU80R1K0CEAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU80R1K0CEAKMA1 CAD Model

Description

The Infineon Technologies 1046105-IPU80R1K0CEAKMA1 is a N-channel MOSFET transistor that comes with a drain-source breakdown voltage of 800V and a continuous drain current of 5.7A (Tc) @ 25°C.

  • Maximum Rds On: 950 mOhm @ 3.6A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 785pF @ 100V
  • Package: PG-TO251 case with TO-251-3 stub leads, IPak mounting
  • Mounting: through-hole mounting
  • Temperature Range: -55°C to 150°C (TJ)
  • Applications: ideal for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,200 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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