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Same model may have multiple batches, images only for reference.
IPW50R140CP Real Image
Same model may have multiple batches, images only for reference.

IPW50R140CP

Part No IPW50R140CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 23A TO-247
Datasheet
IPW50R140CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 930μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2540pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069110-IPW50R140CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW50R140CP CAD Model

Description

The Infineon Technologies 069110-IPW50R140CP is an N-channel MOSFET with a drain-source breakdown voltage of 550V and a maximum continuous drain current of 23A @ 25°C.

  • Power Dissipation: 192W (Tc)
  • Maximum Rds On: 140mOhm @ Id,Vgs of 14A and 10V
  • Gate-Source Threshold Voltage: 3.5V @ 930μA
  • Maximum Gate Charge: 64nC @ 10V
  • Maximum Input Capacitance: 2540pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Mounting: Through hole
  • Supply and Demand Status: Balanced

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50+ $6.1177 $305.8850
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