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Same model may have multiple batches, images only for reference.
IPW50R190CE Real Image
Same model may have multiple batches, images only for reference.

IPW50R190CE

Part No IPW50R190CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
Power Dissipation (Max) 152W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603782-IPW50R190CE
Ultra Librarian 3D Model Ultra Librarian IPW50R190CE CAD Model

Description

The 603782-IPW50R190CE is an N-channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • Vdss: 500V
  • Id: 24.8A @ 25°C
  • Rds On (Max): 190mOhm @ 6.2A, 13V
  • Qg: 47.2nC @ 10V
  • Ciss: 1137pF @ 100V
  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Through-Hole
  • Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $33.6163 $67.2326
5+ $27.5826 $137.9130
7+ $26.7209 $187.0463
9+ $25.8581 $232.7229
12+ $24.9965 $299.9580
16+ $22.4105 $358.5680
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MOQ: 2 pcs
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