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IPW50R280CE

Part No IPW50R280CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A PG-TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Gate-Source Threshold Voltage 3.5V @ 350μA
Max Gate Charge 32.6nC @ 10V
Max Input Capacitance 773pF @ 100V
Maximum Gate-Source Voltage ±20V
FET Feature Super Junction
Power Dissipation (Max) 92W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.2A, 13V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 205251-IPW50R280CE
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW50R280CE CAD Model

Description

The Infineon Technologies 205251-IPW50R280CE is a MOSFET transistor that is designed for use in various applications.

  • Type: N-channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 13A @ 25°C
  • Maximum Rds On at Id,Vgs: 280 mOhm @ 4.2A, 13V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 350μA
  • Maximum Gate Charge: 32.6nC @ 10V
  • Maximum Input Capacitance: 773pF @ 100V
  • Package: PG-TO247-3, with TO-247-3 dimensions
  • Power Dissipation: 92W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Component Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5292 $58.7628
22+ $5.3569 $117.8518
34+ $5.1894 $176.4396
46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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