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Same model may have multiple batches, images only for reference.
IPW60R099CPA Real Image
Same model may have multiple batches, images only for reference.

IPW60R099CPA

Part No IPW60R099CPA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 31A TO-247
Datasheet
IPW60R099CPA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 18A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069117-IPW60R099CPA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R099CPA CAD Model

Description

The Infineon Technologies IPW60R099CPA is a N-Channel MOSFET that is ideal for use in discrete semiconductor products.

  • Power Dissipation: 255W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 18A, 10V
  • Package: PG-TO247-3
  • Dimension: TO-247-3
  • Temperature Range: -40°C to 150°C (TJ)
  • Mounting: through hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Input Capacitance: 2800pF @ 100V

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22+ $5.2668 $115.8696
34+ $5.1028 $173.4952
47+ $4.9376 $232.0672
61+ $4.7736 $291.1896
81+ $4.2793 $346.6233
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Availability: 4,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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